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H0700KC14D Schematic ( PDF Datasheet ) - IXYS

Teilenummer H0700KC14D
Beschreibung Fast Symmetrical Gate Turn-Off Thyristor
Hersteller IXYS
Logo IXYS Logo 




Gesamt 15 Seiten
H0700KC14D Datasheet, Funktion
Date:- 28 September, 2012
Data Sheet Issue:- 2
Fast Symmetrical Gate Turn-Off Thyristor
Type H0700KC14# to H0700KC17#
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
1400-1700
1500-1800
100-1360
100-1360
UNITS
V
V
V
V
ITGQ
Ls
IT(AVM)
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tj
Tstg
RATINGS
Peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQ, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6).
Minimum permissible off-time, ITM=ITGQ, (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=40A/µs, CS=1.5µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
700
0.3
360
700
4
7.2
80×103
1000
160
5
100
18
45
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
A2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Type H0700KC14# to H0700KC17# Issue 2
Page 1 of 15
September, 2012






H0700KC14D Datasheet, Funktion
Fast Symmetrical Gate Turn-Off Thyristor type H0700KC14# to H0700KC17#
2.5 Gate trigger characteristics.
These are measured by slowly ramping up the gate current and monitoring the transition of anode
current and voltage (see diagram 7). Maximum and typical data of gate trigger current, for the full junction
temperature range, is given in the curves of figure 6. Only typical figures are given for gate trigger
voltage, however, the curves of figure 1 give the range of gate forward characteristics, for the full
allowable junction temperature range. The curves of figures 1 & 6 should be used in conjunction, when
considering forward gate drive circuit requirement. The gate drive requirements should always be
calculated for lowest junction temperature start-up condition.
Feedback
R1
Current-
sence
CT
Gate-drive
DUT
0.9VAK
C1 Vs
0.1IA
Not to scale
Anode current
Gate current
IGT Anode-Cathode
Voltage
Diagram 7, Gate trigger circuit and waveforms.
2.6 Turn-on characteristics
The basic circuit used for turn-on tests is given in diagram 8. The test is initiated by establishing a
circulating current in Tx, resulting in VD appearing across Cc/Lc. When the test device is fired Cc/Lc
discharges through DUT and commutates Tx off, as pulse from Cc/Lc decays the constant current source
continues to supply a fixed current to DUT. Changing value of Cc & Lc allows adjustment of ITM and di/dt
respectively, VD and i are also adjustable.
Cc Lc
R1
i Tx D
CT
Gate-drive
DUT
Cd Vd
Diagram 8, Turn-on test circuit of FT40.
The definitions of turn-on parameters used in the characteristic data are given in diagram 9. The gate
circuit conditions IGM & IG are fully adjustable, IGM duration 10µs.
diG/dt
IG
IGM
td tr
di/dt
VD
tgt
VD=VDM
ITM
Eon integral
period
Diagram 9, Turn-on wave-diagrams.
Data Sheet. Type H0700KC14# to H0700KC17# Issue 2
Page 6 of 15
September, 2012

6 Page









H0700KC14D pdf, datenblatt
Fast Symmetrical Gate Turn-Off Thyristor type H0700KC14# to H0700KC17#
Figure 8 – Typical turn-on energy per pulse
(including snubber discharge)
200
H0700KC14#-17#
Issue 2
VD=0.5VDRM
IGM=30A, diG/dt=15A/µs
Cs=1.5µF, Rs=5W
Tj=25oC
150
di/dt=500A/µs
di/dt=300A/µs
di/dt=100A/µs
100
Figure 9 – Maximum turn-on time
5
H0700KC14#-17#
Issue 2
VD=0.5VDRM, ITGQ=600A
tr of IGM 2µs
Tj=25oC
4
3
IGM=30A
IGM=40A
IGM=50A
2
50
1
0
0 300 600 900 1200
TURN-ON CURRENT, ITM(A)
Figure 10 – Typical peak turn-off gate current
250
H0700KC14#-17#
Issue 2
VD=0.8VDRM
Tj=125oC
diGQ/dt=50A/µs
diGQ/dt=40A/µs
200
diGQ/dt=30A/µs
0
10 100 1000
RATE OF RISE OF ON-STATE CURRENT, di/dt (A/ µs)
Figure 11 – Maximum gate turn-off charge
1.2
H0700KC14#-17#
Issue 2
VD=0.8VDRM
Tj=125oC
1
diGQ/dt=20A/µs
diGQ/dt=30A/µs
0.8 diGQ/dt=40A/µs
diGQ/dt=50A/µs
150 0.6
0.4
100
QGQ
0.2
50
0
200 400 600 800
TURN-OFF CURRENT, IT (A)
1000
0
0 200 400 600 800 1000
TURN-OFF CURRENT, ITGQ (A)
Data Sheet. Type H0700KC14# to H0700KC17# Issue 2
Page 12 of 15
September, 2012

12 Page





SeitenGesamt 15 Seiten
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