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K6F4016U4G-F Schematic ( PDF Datasheet ) - Samsung semiconductor

Teilenummer K6F4016U4G-F
Beschreibung 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Hersteller Samsung semiconductor
Logo Samsung semiconductor Logo 




Gesamt 9 Seiten
K6F4016U4G-F Datasheet, Funktion
K6F4016U4G Family
Preliminary
CMwwOwS.DaStaSRheAet4MU.com
Document Title
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
October 15, 2003
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 0.0
October 2003






K6F4016U4G-F Datasheet, Funktion
K6F4016U4G Family
Preliminary
CMwwOwS.DaStaSRheAet4MU.com
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, UB or/and LB=VIL)
Address
Data Out
tOH
Previous Data Valid
tAA
tRC
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS
UB, LB
OE
Data out
High-Z
tAA
tCO
tBA
tOE
tOLZ
tBLZ
tLZ
tRC
tOH
Data Valid
tHZ
tBHZ
tOHZ
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
- 6 - Revision 0.0
October 2003

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