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PDF AO3409 Data sheet ( Hoja de datos )
| Número de pieza | AO3409 | |
| Descripción | 30V P-Channel MOSFET | |
| Fabricantes | Oucan Semi | |
| Logotipo |  |
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AO3409
30V P-Channel MOSFET
General Description
Product Summary
The AO3409 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS=-4.5V)
-30V
-2.6A
< 110mΩ
< 180mΩ
SOT23
Top View
Bottom View
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-30
±20
-2.6
-2.2
-20
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 9: November 2010
Page 1 of 5
1 page  
VDC
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
-10V
Qg
Vds
VDC
DUT
Qgs Qgd
Vds
Vgs
Rg
Vgs
Resistive Switching Test Circuit & Waveforms
RL
Vgs
ton
td(on) tr
toff
td(off)
tf
DUT
Vdd
VDC
Vds
AO3409
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L EAR= 1/2 LIAR
Vgs
DUT
Vds
Vdd
VDC
Id
Vgs
BVDSS
I AR
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Vgs
Q rr = - Idt
+
Vdd
VDC
-
-Isd
-Vds
-I F t rr
dI/dt
-I RM
Vdd
Rev 9: November 2010
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO3409.PDF ] | |
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