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Teilenummer | AO3407 |
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Beschreibung | P-Channel MOSFET | |
Hersteller | HOTTECH | |
Logo | ||
Gesamt 4 Seiten Plastic-Encapsulate Mosfets
FEATURES
The AO3407 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
G
AO3407
P-Channel MOSFET
D
1.Gate
2.Source
3.Drain
SOT-23
S
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
TA=25°C
T =70°C
Pulsed Drain Current C
Power Dissipation B
TA=25°C
TA=70°C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
TJ, TSTG
Maximum
-30
±20
-4.1
-3.5
-25
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ Max
70 90
100 125
63 80
Unit
V
V
A
W
°C
Unit
°C/W
°C/W
°C/W
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P4-P1
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ AO3407 Schematic.PDF ] |
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