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PDF 2N7000 Data sheet ( Hoja de datos )
| Número de pieza | 2N7000 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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 1. 60-V (D-S) MOSFET - Vishay  Hay una vista previa y un enlace de descarga de 2N7000 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed(Note 1)
Drain Power Dissipation
Junction Temperature
VDSS
VGSS
ID
IDP
PD
Tj
Storage Temperature Range
Tstg
Note 1) Pulse Width 10 , Duty Cycle 1%
RATING
60
20
500
2000
625
150
-55 150
UNIT
V
V
mA
mW
2N7000
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
BC
KE
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00+_ 0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. SOURCE
2. GATE
3. DRAIN
TO-92
EQUIVALENT CIRCUIT
D
G
S
PLEASE HANDLE WITH CAUTION.
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
BVDSS
IDSS
IGSSF
Gate-Body Leakage, Reverse
IGSSR
TEST CONDITION
VGS=0V, ID=10 A
VDS=60V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
100
-100
UNIT
V
A
nA
nA
2009. 11. 17
Revision No : 2
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N7000.PDF ] | |
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