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PDF MBRD10200CT Data sheet ( Hoja de datos )
| Número de pieza | MBRD10200CT | |
| Descripción | SCHOTTKY BARRIER RECTIFIER | |
| Fabricantes | First Silicon | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
MBRD10200CT
MBRD10200CT SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
AI
CJ
H
FF
123
1 ANODE
2 CATHODE
3 ANODE
DIM MILLIMETERS
A 6 50 ± 0 2
B 5 60 ± 0 2
C 5 20 ± 0 2
D 1 50 ± 0 2
E 2 70 ± 0 2
F 2 30 ± 0 1
H 1 00 MAX
LI
J
2 30 ± 0 2
05± 01
L 0 50 ± 0 10
O 16±02
Q 0 95 MAX
1
22
3
TO-252 (D-PAK)
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
VRRM
VRWM
VR(RMS)
IO
IFSM
Peak repetitive reverse voltage
Working peak reverse voltage
RMS reverse voltage
Average rectified output current
Non-repetitive peak forward surge current
8.3ms half sine wave
200
140
10
125
PD
RΘJA
Tj
Tstg
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
1.25
80
125
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Reverse voltage
Reverse current
Forward voltage
Typical total capacitance
V(BR)
IR
VF(1)
VF(2)*
Ctot
IR=100μA
VR=200V
IF=5A
IF=10A
VR=4V,f=1MHz
200 V
50 μA
0.92 V
1.1 V
50 pF
*Pulse test
2016. 06. 07
Revision No : 0
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBRD10200CT.PDF ] | |
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