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1N5312 Schematic ( PDF Datasheet ) - Central Semiconductor

Teilenummer 1N5312
Beschreibung SILICON CURRENT LIMITING DIODE
Hersteller Central Semiconductor
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Gesamt 2 Seiten
1N5312 Datasheet, Funktion
1N5283 THRU 1N5314
SILICON CURRENT LIMITING DIODE
DO-35 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5283 series
types are silicon field effect current regulator diodes
designed for applications requiring a constant
current over a wide voltage range. These devices
are manufactured in the cost effective DO-35 double
plug case which provides many benefits to the
user, including space savings and improved thermal
characteristics. Special selections of IP (regulator
current) are available for critical applications.
FEATURES:
• High Reliability
• Special Selections Available
• Superior Lot To Lot Consistency
• Surface Mount Devices Available
MAXIMUM RATINGS: (TL=75°C)
Peak Operating Voltage
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
POV
PD
TJ, Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C)
Type
Regulator
Current
(Note 1)
IP @ VT=25V
MIN NOM MAX
mA mA mA
Minimum
Dynamic
Impedance
ZT @ VT=25V
1N5283
0.198 0.22 0.242
25
1N5284
0.216 0.24 0.264
19
1N5285
0.243 0.27 0.297
14
1N5286
0.270 0.30 0.330
9.0
1N5287
0.297 0.33 0.363
6.6
1N5288
0.351 0.39 0.429
4.1
1N5289
0.387 0.43 0.473
3.3
1N5290
0.423 0.47 0.517
2.7
1N5291
0.504 0.56 0.616
1.90
1N5292
0.558 0.62 0.682
1.55
1N5293
0.612 0.68 0.748
1.35
1N5294
0.675 0.75 0.825
1.15
1N5295
0.738 0.82 0.902
1.00
1N5296
0.819 0.91 1.001
0.88
1N5297
0.900
1.00
1.10
0.80
1N5298
0.990
1.10
1.21
0.70
Notes: (1) Pulsed Method: Pulse Width (ms) = 27.5 divided by IP NOM (mA)
100
600
-65 to +200
Minimum
Knee
Impedance
ZK @ VK=6.0V
2.75
2.35
1.95
1.60
1.35
1.00
0.87
0.75
0.56
0.47
0.40
0.335
0.29
0.24
0.205
0.18
UNITS
V
mW
°C
Maximum
Limiting
Voltage
VL @ IL=0.8 x IP MIN
V
1.0
1.0
1.0
1.0
1.0
1.05
1.05
1.05
1.10
1.13
1.15
1.20
1.25
1.29
1.35
1.40
R3 (24-May 2010)





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