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PDF MMBT2369A Data sheet ( Hoja de datos )
| Número de pieza | MMBT2369A | |
| Descripción | Surface Mount Si-Epi-Planar Switching Transistors | |
| Fabricantes | Diotec | |
| Logotipo |  |
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MMBT2369 / MMBT2369A
MMBT2369 / MMBT2369A
NPN
Surface Mount Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage
Version 2006-06-02
2.9 ±0.1
0.4 3
Type
Code
1
2
1.1
1.9
Dimensions - Maße [mm]
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
NPN
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
E-B short
B open
E open
C open
VCES
VCEO
VCBO
VEBO
Ptot
IC
Tj
TS
Grenzwerte (TA = 25°C)
MMBT2369 MMBT2369A
40 V
15 V
15 V
15 V
40 V
40 V
4.5 V
250 mW 1)
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 2 V
MMBT2369
hFE
hFE
IC = 10 mA, VCE = 1 V
IC = 10 mA, VCE = 0.35 V
IC = 10 mA, VCE = 0.35 V, Tj = -55°C
IC = 30 mA, VCE = 0.4 V
IC = 100 mA, VCE = 1 V
MMBT2369A
hFE
hFE
hFE
hFE
hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 10 mA, IB = 1 mA
MMBT2369
VCEsat
IC = 10 mA, IB = 1 mA
IC = 10 mA, IB = 1 mA, Tj = 125°C
IC = 30 mA, IB = 3 mA
IC = 100 mA, IB = 10 mA
MMBT2369A
VCEsat
VCEsat
VCEsat
VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
40 – 120
20 –
–
– – 120
40 –
–
20 –
–
30 –
–
20 –
–
– – 0.25 V
– – 0.20 V
– – 0.30 V
– – 0.25 V
– – 0.50 V
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBT2369A.PDF ] | |
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