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Teilenummer | MMBD2836 |
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Beschreibung | Silicon Epitaxial Planar Switching Diode | |
Hersteller | JR | |
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Gesamt 2 Seiten Silicon Epitaxial Planar Switching Diode
MMBD2835, MMBD2836
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Reverse Voltage
Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
3
12
Marking Code: A1
SOT-23 Plastic Package
MMBD2835
MMBD2836
Symbol
VR
IF
Ptot
Tj
Tstg
Value
35
75
100
350
150
- 55 to + 150
Unit
V
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 10 mA
at IF = 50 mA
at IF = 100 mA
Reverse Current
at VR = 30 V
at VR = 50 V
Reverse Breakdown Voltage
at IR = 100 µA
Diode Capacitance
at VR = 0 , f = 1 MHz
Reverse Recovery Time
at IF = IR = 10 mA, IR(REC) = 1 mA
Symbol
MMBD2835
MMBD2836
VF
VF
VF
IR
MMBD2835
MMBD2836
V(BR)R
CT
trr
Min.
-
-
-
-
-
35
75
-
-
Max.
1
1
1.2
100
100
-
-
4
4
Unit
V
V
V
nA
V
pF
ns
ShangHai JR Electronics.CO.,LTD.
http://www.jrdz.net.cn
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ MMBD2836 Schematic.PDF ] |
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