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PDF MQ3467 Data sheet ( Hoja de datos )
| Número de pieza | MQ3467 | |
| Descripción | DUAL AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ TA = 25°C
MD3467
MD3467F
MQ3467
Derate above 25°C
MD3467
MD3467F
MQ3467
Total Device Dissipation
@ TC = 25°C
MD3467
MD3467F
MQ3467
Derate above 25°C
MD3467
MD3467F
MQ3467
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
v EBO
'C
PD
Value
40
40
5.0
1.5
All Die
One Die Equal Power
Unit
Vdc
Vdc
Vdc
Adc
mW
600
350
400
3.42
2.0
2.28
PD
650
400
600
3.7
2.28
3.42
mW/°C
Watts
TJ- Tstg
2.1
1.25
1.0
3.0
2.5
4.0
12
7.15
5.71
17.2
14.3
22.8
-65 to +200
mW/°C
°C
MD3467,F
MQ3467
MD3467
CASE 654-07, STYLE 1
MD3467F
CASE 610A-04, STYLE 1
MQ3467
CASE 607-04, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
PNP SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MD3467
MD3467F
MQ3467
MD3467
MD3467F
MQ3467
Symbol
R aJC,
RejA<D
Coupling Factors
MD3467
MD3467F
MQ3467 (Q1-Q2)
(Q1-Q3orQ1-Q4)
0)
R 8JA
s
I
measured
with
the
device
soldered
into
a
typical
printed
circuit
board.
One Die
All Die
Equal Power
83.3
140
175
58.3
70
43.8
292
500
438
Junction to
Ambient
270
438
292
Junction to
Case
85 40
75
57
55
Unit
°C/W
°c/w
%'
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage(2)
dC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 10 /xAdc, l£ = 0)
Emitter-Base Breakdown Voltage
(IE == 10 /iAdc, lc = 0)
Collector Cutoff Current
(Vcb = 30 Vdc, El = 0, TA = 100°C)
Emitter Cutoff Current
(V BE = 3.0 Vdc, cl = 0)
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
'CBO
'EBO
Min
40
40
5.0
—
—
Typ
-
-
—
—
—
-
-
—-
10
100
Unit
Vdc
Vdc
Vdc
/xAdc
nAdc
5-61
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MQ3467.PDF ] | |
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