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PDF C1004 Data sheet ( Hoja de datos )
| Número de pieza | C1004 | |
| Descripción | Process C1004 | |
| Fabricantes | IMP Inc | |
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Hay una vista previa y un enlace de descarga de C1004 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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®
ISO 9001 Registered
Process C1004
CMOS 1.0µm
5 Volt Digital
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold
Electrical Characteristics
Symbol
VTN
γN
βN
LeffN
∆WN
BVDSSN
VTFP(N)
Minimum
0.55
74
0.60
7
10
Typical
0.75
0.60
87
0.75
0.8
T=25oC Unless otherwise noted
Maximum
0.95
100
0.90
Unit
V
V1/2
µA/V2
µm
µm
V
V
Comments
100x1.0µm
100x1.0µm
100x100µm
100x1.0µm
Per side
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTP
γP
βP
LeffP
∆WP
BVDSSP
VTFP(P)
Minimum
–0.85
24
0.83
–7
–10
Typical
–1.0
0.4
28
0.98
0.85
Maximum
–1.15
32
1.13
Unit
V
V1/2
µA/V2
µm
µm
V
V
Comments
100x1.0µm
100x1.0µm
100x100µm
100x1.0µm
Per side
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Field Oxide Thickness
Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
Symbol
ρN-well(f)
ρN+
xjN+
ρP+
xjP+
TGOX
TFIELD
ρPOLY
ρM1
ρM2
TPASS
Minimum
0.8
20
60
15
Typical
1.0
35
0.45
80
0.5
20
700
22
50
30
200+900
Maximum
1.22
50
100
30
Unit
KΩ/
Ω/
µm
Ω/
µm
nm
nm
Ω/
mΩ/
mΩ/
nm
Comments
n-well
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-1 to SIlicon
Metal-2 to Metal-1
Symbol
Cox
CM1P
CMIS
CMM
Minimum
1.52
Typical
1.64
0.046
0.028
0.038
Maximum
1.82
Unit
fF/µm2
fF/µm2
fF/µm2
fF/µm2
Comments
© IMP, Inc.
17
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet C1004.PDF ] | |
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