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2N1132 Schematic ( PDF Datasheet ) - TT

Teilenummer 2N1132
Beschreibung SILICON PLANAR PNP TRANSISTOR
Hersteller TT
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Gesamt 3 Seiten
2N1132 Datasheet, Funktion
SILICON PLANAR
PNP TRANSISTOR
2N1132
High Speed Switching
Hermetic TO-39 Metal package.
Ideally suited for Small Signal General Purpose
and Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-50V
VCEO
Collector – Emitter Voltage
-40V
VEBO
Emitter – Base Voltage
-5V
IC Continuous Collector Current
-600mA
PD Total Power Dissipation at TA = 25°C
600mW
Derate Above 25°C
3.4mW/°C
PD Total Power Dissipation at TC = 25°C
2W
Derate Above 25°C
11.4mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
292
87.5
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8069
Issue 1
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