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PDF STD13N60M2 Data sheet ( Hoja de datos )
| Número de pieza | STD13N60M2 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
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STB13N60M2,
STD13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A
MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages
Datasheet - production data
Features
Order code
STB13N60M2
STD13N60M2
VDS@TJMAX.
650 V
RDS(on) max.
0.38 Ω
ID
11 A
Figure 1: Internal schematic diagram
D(2, TAB)
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
G(1)
S(3)
Order code
STB13N60M2
STD13N60M2
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
AM01476v1_tab
Table 1: Device summary
Marking
Package
13N60M2
D2PAK
DPAK
Packing
Tape and reel
September 2016
DocID024569 Rev 4
This is information on a product in full production.
1/23
www.st.com
1 page  
STB13N60M2, STD13N60M2
Symbol Parameter
td(on)
Turn-on
delay time
tr
td(off)
Rise time
Turn-off-
delay time
tf Fall time
Table 7: Switching times
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
- 11 - ns
VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 16: "Test circuit for
- 10 - ns
resistive load switching times" and Figure 21:
"Switching time waveform")
- 41 - ns
- 9.5 - ns
Symbol Parameter
ISD
Source-drain
current
ISDM(1)
Source-drain
current
(pulsed)
VSD (2)
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
Table 8: Source-drain diode
Test conditions
Min. Typ. Max. Unit
- 11 A
- 44 A
VGS = 0 V, ISD = 11 A
ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 18: "Test circuit for inductive
load switching and diode recovery times")
- 1.6 V
- 297
ns
- 2.8
µC
- 18.5
A
- 394
ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 18: "Test circuit for - 3.8
inductive load switching and diode
recovery times")
- 19
ns
µC
A
Notes:
(1)Pulse width is limited by safe operating area.
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
DocID024569 Rev 4
5/23
5 Page 
STB13N60M2, STD13N60M2
Package mechanical data
Table 9: D²PAK (TO-263) type A package mechanical data
Dim.
Min.
mm
Typ.
Max.
A 4.40
4.60
A1 0.03
0.23
b 0.70
0.93
b2 1.14
1.70
c 0.45
0.60
c2 1.23
1.36
D 8.95
9.35
D1 7.50 7.75
8.00
D2 1.10 1.30
1.50
E 10
10.40
E1 8.50 8.70
8.90
E2 6.85 7.05
7.25
e 2.54
e1 4.88
5.28
H 15
15.85
J1 2.49
2.69
L 2.29
2.79
L1 1.27
1.40
L2 1.30
1.75
R 0.4
V2 0°
8°
DocID024569 Rev 4
11/23
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet STD13N60M2.PDF ] | |
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