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Número de pieza | MBR6030 | |
Descripción | Silicon Power Schottky Diode | |
Fabricantes | GeneSiC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBR6030 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
MBR6020 thru MBR6040R
VRRM = 20 V - 40 V
IF = 60 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR6020 (R) MBR6030 (R) MBR6035 (R) MBR6040 (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
VRRM
VRMS
VDC
IF
IF,SM
Tj
Tstg
TC ≤ 100 °C
TC = 25 °C, tp = 8.3 ms
20
14
20
60
700
-55 to 150
-55 to 150
30
21
30
60
700
-55 to 150
-55 to 150
35
25
35
60
700
-55 to 150
-55 to 150
40
28
40
60
700
-55 to 150
-55 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR6020 (R) MBR6030(R) MBR6035 (R) MBR6040 (R) Unit
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
VF IF = 60 A, Tj = 25 °C
IR
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
RthJC
0.65
5
150
1.0
0.65
5
150
1.0
0.65
5
150
1.0
0.65 V
5
150
mA
1.0 °C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MBR6030.PDF ] |
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