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Número de pieza | BFX36 | |
Descripción | DUAL AMPLIFIER TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFX36 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VCEO
60
Vdc
VCBO
60
Vdc
VEBO
6
Vdc
ic 100 mAdc
One Die Both Die
PD 400 600 mW
mW/°C
pd
Tj, T s tg
0.8 1.3
-65 to +200
Watts
mW/°C
°C
BFX36
CASE 654-07, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
Characteristic
OFf CHARACTERISTICS
Collector-Emitter Sustaining Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
(Ic = 5 mA, Ib = 0)
dC = 10 uA, lg = 0)
(IE = 10 uA, Ic = 0)
(Vcb = 50 V, l£ = 0)
(VCB = 50 V, Ie = 0, Ta = 125°C)
(VEB = 4 V, Ic = 0)
DC Current Gain (Ic = 1 uAdc, Vce = 5 V)
(IC = 10 ^Adc, Vqe = 5 Vdc)
(IC = 100 nAdc, Vce = 5 Vdc)
dC = 1 mAdc, Vce = 5 Vdc)
(IC = 50 mAdc, Vce = 5 Vdc)
dC = TO l*Adc, Vce = 5 Vdc, Ta =
55°C)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 0.5 mAdc)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL-SIGNAL CHARACTERISTICS
(IC = 50 mAdc, Ir = 5 mAdc)
Current-Gain - Bandwidth Product (Ic = 1 mAdc, Vce = 5 Vdc, f = 20 MHz)
Output Capacitance
(Vcb = 5 Vdc, l£ = 0, f = 140 kHz)
Input Impedance
dC = 1 mAdc, Vce = 5 Vdc, f = 1 kHz)
Voltage Feedback Ratio (Ic = 1 mAdc, Vce = 5 Vdc, f = 1 kHz)
Output Admittance
(Ic = 1 mAdc, Vce = 5 Vdc, f = 1 kHz)
Noise Figure (3)
dC = 20 nAdc, Vce = 5 Vdc. Rs = 1 kohms, f = 1 kHz)
Noise Figure (4)
dC = 20 |iAdc, Vce = 5 Vdc, Rs = 10 kohms, f = 1 kHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2)
_dC = 100 nAdc, Vce = 5 Vdc)
Base-Emitter Voltage Differential (Ic = 100 uAdc, Vce = 5 Vdc)
Base-Emitter Voltage Differential Gradient
dC = 100 uAdc, VC E = 5 Vdc, TA = -55°C to +125°C)
(1 ) Pulse Test: Pulse Width < 300 us. Duty Cycle < 2.0%.
(2) Lowest hpE reading is taken as hpE1 for this ratio
(3) BW = 200 Hz
(4) BW = 20 Hz
Symbol
Min
[
VCEO(sus)
V(BR)CBO
v (BR)EBO
ICBO
hFE
v CE(sat)
VBE(sat)
VCE(sat)
VBE(sat)
60
100
100
100
90
40
Cq bo
2.5
NF
NF
hFEl/hFE2
IVBE1-VBE2I
A(VBE1-VBE2)
AT A
0.9
Max
60
60
10
10
10
Unit
Vdc
Vdc
Vdc
nAdc
uAdc
nAdc
300
0.25
0.9
0.4
0.95
Vdc
Vdc
MHz
PF
20 kohm
10 x 10-"
50 nmhos
dB
10 dB
mVdc
10 HV/°C
5-37
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet BFX36.PDF ] |
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