Datenblatt-pdf.com


BCW60C Schematic ( PDF Datasheet ) - RECTRON

Teilenummer BCW60C
Beschreibung NPN Transistor
Hersteller RECTRON
Logo RECTRON Logo 




Gesamt 2 Seiten
BCW60C Datasheet, Funktion
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
BCW60C
FEATURES
* Power dissipation
PCM :
0.25
W (Tamb=25OC)
* Collector current
ICM :
0.1 A
* Collector-base voltage
V(BR)CBO : 32
V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase , half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (IC= 10mA, IE=0)
SYMBOL
V(BR)CBO
Collector-emitter breakdown voltage (IC= 1mA, IB=0)
Emitter-base breakdown voltage (IE= 10mA, IC=0)
Collector cut-off current (VCB= 32V, IE=0)
V(BR)CEO
V(BR)EBO
ICBO
Collector cut-off current (VEB= 4V, IC=0)
IEBO
DC current gain (VCE= 5V, IC= 10mA)
DC current gain (VCE= 5V, IC= 2mA)
DC current gain (VCE= 5V, IC= 50mA)
hFE
Collector-emitter saturation voltage (IC= 10mA, IB= 0.25mA)
Collector-emitter saturation voltage (IC= 50mA, IB= 1.25mA)
VCE(sat)
Base-emitter saturation voltage (IC= 10mA, IB= 0.25mA)
Base-emitter saturation voltage (IC= 50mA, IB= 1.25mA)
Base-emitter voltage (VCE= 5V, IC= 2mA)
Transition frequency (VCE= 5V, IC= 10mA, f=100MHZ)
Output capacitance (VCB= 10V, IE= 0, f=1MHZ)
VBE(sat)
VBE
fT
Cob
Marking
SOT-23
COLLECTOR
3
BASE 1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN TYP
32 -
32 -
5-
--
--
40 -
250 -
100 -
--
--
--
--
0.55 -
100 -
--
AC
MAX
-
-
-
0.02
0.02
-
460
-
0.35
0.55
0.85
1.05
0.75
-
5
UNITS
V
V
V
mA
mA
-
-
-
V
V
V
V
V
MHZ
pF
2006-3





SeitenGesamt 2 Seiten
PDF Download[ BCW60C Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
BCW60NPN general purpose transistorsNXP Semiconductors
NXP Semiconductors
BCW60NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)Siemens Semiconductor Group
Siemens Semiconductor Group
BCW60NPN Silicon AF TransistorsInfineon Technologies AG
Infineon Technologies AG
BCW60Surface mount Si-Epitaxial PlanarTransistorsDiotec Semiconductor
Diotec Semiconductor
BCW60Small Signal TransistorsVishay
Vishay

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche