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PDF BCW60A Data sheet ( Hoja de datos )
| Número de pieza | BCW60A | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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BCW60A,B,C,D
MAXIMUM RATINGS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol
vCEO
VCBO
vEBO
'C
Characteristic
'Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
pd
Storage Temperature
Tstg
'Thermal Resistance Junction to Ambient
R 0JA
mmJ 'Package mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
flC = 2.0 mAdc, lg = 0)
Emitter-Base Breakdown Voltage
(IE = 1.0 f(Adc, lc = 0)
Collector Cutoff Current
(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
dc = 10 ,uAdc, Vqe = 5.0 Vdc)
BCW60A
BCW60B
BCW60C
BCW60D
OC = 2.0 mAdc, Vqe = 5.0 Vdc)
BCW60A
BCW60B
BCW60C
BCW60D
dC = 50 mAdc, Vce = 1.0 Vdc)
BCW60A
BCW60B
BCW60C
BCW60D
dc = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Collector-Emitter Saturation Voltage
dC = 50 mAdc, Bl = 1.25 mAdc)
dC = 10 mAdc, Bl = 0.25 mAdc)
Base-Emitter Saturation Voltage
dC = 50 mAdc, Ib = 1.25 mAdc)
dC = 50 mAdc, Ib = 0.25 mAdc)
Base-Emitter On Voltage
dc = 2.0 mAdc, Vce = 5.0 Vdc)
BCW60A
BCW60B
BCW60C
BCW60D
Symbol
v (BR)CEO
v(BR)EBO
'GES
Min
32
'EBO
"FE
vCE(sat)
v BE(sat)
v BE(on)
20
40
.100
120
180
250
380
60
70
90
100
125
175
250
350
0.7
0.6
Value
32
32
5.0
100
Max
350
2.8
150
357
Max
20
20
20
220
310
460
630
250
350
500
700
0.55
0.35
1.05
0.85
0.75
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
Unit
Vdc
Vdc
nAdc
^iAdc
nAdc
Vdc
Vdc
Vdc
3-10
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCW60A.PDF ] | |
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