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1N5614 Schematic ( Datenblatt PDF ) - Microsemi

Teilenummer 1N5614
Beschreibung STANDARD RECOVERY GLASS RECTIFIERS
Hersteller Microsemi
Logo Microsemi Logo 



Gesamt 3 Seiten
		
1N5614 Datasheet, Funktion
SCOTTSDALE DIVISION
1N5614 thru 1N5622
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
DESCRIPTION
APPEARANCE
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/427 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These
devices are also available in surface mount MELF package configurations by
adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US).
Microsemi also offers numerous other rectifier products to meet higher and lower
current ratings with various recovery time speed requirements including fast and
ultrafast device types in both through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
“A” Package
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered 1N5614 to 1N5622 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/427
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5614US thru 1N5622US)
Standard recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Junction & Storage Temperature: -65oC to +200oC
Thermal Resistance: 38oC/W junction to lead at 3/8
inch (10 mm) lead length from body
Thermal Impedance: 4.5oC/W @ 10 ms heating time
Average Rectified Forward Current (IO): 1.0 Amps @
TA = 55ºC and 0.75 Amps @ TA = 100ºC
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs (package dimensions on last page)
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish. Note: Previous JANS
inventory had solid Silver axial-leads and no finish.
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 340 mg
ELECTRICAL CHARACTERISTICS
WORKING
MINIMUM
AVERAGE
FORWARD
REVERSE
MAXIMUM REVERSE
PEAK
BREAKDOWN
RECTIFIED
VOLTAGE
CURRENT
SURGE RECOVERY
TYPE
REVERSE
VOLTAGE
CURRENT
(MAX.)
(MAX.)
CURRENT (NOTE 3)
VOLTAGE VRWM VBR @ 50μA
IO @ TA
(NOTE 1)
VF @ 3A
IR @ VRWM
IFSM
(NOTE 2)
trr
VOLTS
VOLTS
AMPS
55oC
100oC
VOLTS
μA
25oC
100oC
AMPS
μs
1N5614
200
220 1.00 .750
0.5 25
30
2.0
1N5616
400
440
1.00 .750 0.8 MIN.
0.5
25
30
2.0
1N5618
600
660 1.00 .750
0.5 25
30
2.0
1N5620
800
880
1.00 .750 1.3 MAX. 0.5
25
30
2.0
1N5622
1000
1100
1.00 .750
0.5 25
30
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.
NOTE 2: TA = 100oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals
2.0
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
Copyright © 2007
1-15-2007 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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