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MMBV2103LT1 Schematic ( PDF Datasheet ) - LRC

Teilenummer MMBV2103LT1
Beschreibung Silicon Tuning Diode
Hersteller LRC
Logo LRC Logo 




Gesamt 3 Seiten
MMBV2103LT1 Datasheet, Funktion
LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACKAGE for
high volumerequirements of FM Radio and TV tuning and AFC, general
frequency control andtuning applications.They provide solid–state reliability
in replacement of mechanical tuning methods. Also available in Surface
Mount Package up to 33pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance 10%
Complete Typical Design Curves
3
CATHODE
1
ANODE
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2106 MV2108
MV2109 MV2111
MV2115
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318–08, STYLE 8
MAXIMUM RATINGS(EACH DIODE)
SOT– 23 (TO–236AB)
Rating
Symbol MV21XX MMBV21XXLT1 Unit
Reverse Voltage
Forward Current
Forward power Dissipation @T A = 25°C
Derate above 25°C
VR
IF
PD
30
200
280 225
2.8 1.8
Vdc
mAdc
mW
mW/°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
TJ
+150
°C
T stg –55 to +150 °C
MMBV2101LT1=M4G MMBV2107LT1=4W
MMBV2103LT1=4H
MMBV2108LT1=4X
MMBV2105LT1=4U
MMBV2109LT1=4J
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Symbol Min Typ
Max
Unit
Reverse Breakdown Voltage
(IR=1.0µAdc)
Reverse Voltage Leakage Current
(VR=25Vdc,TA=25°C)
Diode Capacitance Temperature Coefficient
(VR=4.0Vdc,f=1.0MHz)
V (BR)R
IR
TCC
30 —
——
— 280
— Vdc
0.1 µAdc
— ppm/°C
MMBV2101~MMBV2109 –1/3
MV2101~MV2115





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