|
|
Teilenummer | MMBTA70 |
|
Beschreibung | GENERAL PURPOSE TRANSISTOR | |
Hersteller | Motorola Semiconductors | |
Logo | ||
Gesamt 1 Seiten MMBTA70
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
VEBO
'C
THERMAL CHARACTERISTICS
Characteristic
•Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
T stg
•Thermal Resistance Junction to Ambfent
R 6UA
"Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
dC = 1-0 mAdc, Ib = 0)
Emitter-Base Breakdown Voltage
(lg = 100 ^Adc, lc = 0)
Collector Cutoff Current
(VCB = 30 Vdc, El = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 10 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 5.0 mAdc, Vce = 10 Vdc, f = 100 MHz)
Output Capacitance
(Vcb = 10 Vdc, El = 0, f = 100 kHz)
Symbol
v (BR)CEO
v (BR)EBO
!CBO
hFE
VCE(sat)
40
—
-
fT
Cobo
125
—
Value
40
4.0
100
Max
350
2.8
150
357
Max
100
400
0.25
-
4.0
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
Unit
Vdc
Vdc
-
,
Vdc
MHz
PF
3-110
| ||
Seiten | Gesamt 1 Seiten | |
PDF Download | [ MMBTA70 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
MMBTA70 | PNP (AMPLIFIER TRANSISTOR) | Samsung |
MMBTA70 | General Purpose Transistor | Kexin |
MMBTA70 | GENERAL PURPOSE TRANSISTOR | Motorola Semiconductors |
MMBTA70LT1 | General Purpose Transistor | Motorola Semiconductors |
MMBTA70LT1 | General Purpose Transistor | Leshan Radio Company |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |