Datenblatt-pdf.com


3N209 Schematic ( PDF Datasheet ) - Digitron Semiconductors

Teilenummer 3N209
Beschreibung DUAL GATE MOSFET VHF AMPLIFIER
Hersteller Digitron Semiconductors
Logo Digitron Semiconductors Logo 




Gesamt 6 Seiten
3N209 Datasheet, Funktion
3N209-3N210
High-reliability discrete products
and engineering services since 1977
DUAL GATE MOSFET VHF AMPLIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Drain – source voltage
Drain gate voltage
Rating
Gate current
Drain current – continuous
Total power dissipation @ TA = 25°C
Derate above 25°C
Storage channel temperature range
Operating channel temperature
Lead temperature, 1/16” from seated surface for 10 s
Symbol
VDS
VDG1
VDG2
IG1R
IG1F
IG2R
IG2F
ID
PD
Tstg
Tchannel
Value
25
30
-10
10
-10
10
30
3N209
3N210
300
1.71
-65 to 200
350
2.80
-65 to 175
200 150
260
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristic
OFF CHARACTERISTICS
Drain source breakdown voltage
(ID = 10µAdc, VG1S = -4.0Vdc, VG2S = 4.0Vdc)
Gate 1 – source forward breakdown voltage
(IG1 = 10mAdc, VG2S = VDS = 0)
Gate 1 – source reverse breakdown voltage
(IG1 = -10mAdc, VG2S = VDS = 0)
Gate 2 – source forward breakdown voltage
(IG2 = 10mAdc, VG1S = VDS = 0)
Gate 2 – source reverse breakdown voltage
(IG2 = -10mAdc, VG1S = VDS = 0)
Gate 1 – source cutoff voltage
(VDS = 15Vdc, VG2S = 4.0Vdc, ID = 50µAdc)
Gate 2 – source cutoff voltage
(VDS = 15Vdc, VG1S = 0Vdc, ID = 50µAdc)
Gate 1 – terminal forward current
(VG1S = 6.0Vdc, VG2S = VDS = 0)
Gate 1 – terminal reverse current
(VG1S = -6.0Vdc, VG2S = VDS = 0)
(VG1S = -6.0Vdc, VG2S = VDS = 0, TA = 150°C)
Symbol
Min
Typ
Max
V(BR)DS
25
-
-
V(BR)G1SSF
7.0
-
22
V(BR)G1SSR
7.0
-
-22
V(BR)G2SSF
7.0
-
22
V(BR)G2SSR
-7.0
-
-22
VG1S(off)
-0.1
-
-4.0
VG2S(off)
-0.1
-
-4.0
IG1SSF
-
- 20
IG1SSR
-
-
- -20
- -10
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
°C
°C
°C
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
nAdc
nAdc
µAdc
Rev. 20120705






3N209 Datasheet, Funktion
High-reliability discrete products
and engineering services since 1977
3N209-3N210
DUAL GATE MOSFET VHF AMPLIFIER
Rev. 20120705

6 Page







SeitenGesamt 6 Seiten
PDF Download[ 3N209 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
3N200SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTORIntersil Corporation
Intersil Corporation
3N200Trans MOSFET N-CH 25V 4-Pin TO-72New Jersey Semiconductor
New Jersey Semiconductor
3N201Diode ( Rectifier )American Microsemiconductor
American Microsemiconductor
3N201DUAL GATE MOSFET VHF AMPLIFIERMotorola  Inc
Motorola Inc
3N201Trans MOSFET N-CH 25V 4-Pin TO-72New Jersey Semiconductor
New Jersey Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche