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Teilenummer | 3N209 |
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Beschreibung | DUAL-GATE MOSFET | |
Hersteller | Motorola Semiconductors | |
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Gesamt 5 Seiten MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Drain Current
Gate Current
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Lead Temperature, 1/16" From Seated
Surface for 10 seconds
Storage Channel Temperature Range
Operating Channel Temperature
Symbol
vDs
V DG1
VDG2
id
'G1R
'G1F
<G2R
'G2F
PD
Pd
tl
Value
25
30
30
30
-10
10
-10
10
3N209 MPF209
Unit
Vdc
Vdc
mAdc
mAdc
300 - mW
1.71 mW/°C
300 mW
2.4 mW/°C
260 200 °C
Tstg
Tchannel
-65 to
+ 175
175
-65 to
+ 150
150
°C
°C
3N209
MPF209
3N209
CASE 20-03, STYLE 9
TO-72 (TO-206AF)
MPF209
CASE 317-01, STYLE 1
DUAL-GATE
MOSFET
UHF COMMUNICATIONS
—N-CHANNEL DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Drain-Source Breakdown Voltage
(ID = lO^tAdc, Vqis = -4.0Vdc, VQ2S = 4.0 Vdc)
—Gate 1 Source Forward Breakdown Voltage
(Id = 10 mAdc, VG2s = VDS = 0)
—Gate 1 Source Reverse Breakdown Voltage
dGI = -10 mAdc, VG2s = VDS = 0)
—Gate 2 Source Forward Breakdown Voltage
dG2 = 10 mAdc, VG1S = VdS = 0)
—Gate 2 SoOrce Reverse Breakdown Voltage
0G2 = -10 mAdc, Vgis = VDS = 0)
—Gate 1 Terminal Forward Current
(Vgis = 6.0 vdc, vG2s = vds = o*
—Gate 1 Terminal Reverse Current
(VG1S = -6.0Vdc,VG2S = Vds - 0)
<VG1S = -6.0 Vdc, VG2S = Vds = 0, TA = 150°C)
—Gate 2 Terminal Forward Current
"
(VG2S ^ 6.0 vdc, vG1s = Vds = oi
—Gate 2 Terminal Reverse Current '
(VG2S = - 6.0 Vdc, Vq 1 S = Vds = 0)
(VG2S = -6.0 Vdc, VQ1S = VDS = 0, TA = 150°C)
ON CHARACTERISTICS
—Gate 1 Zero Voltage Drain Current
(VpS = 15 Vdc, Vqis = 0. VG2S = 4.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
<Vds = 15 Vdc, VQ2S = 4.0 Vdc, Id = 10 mAdc, f = 1.0 kHz)
Input Capacitance
(Vds = 15 Vdc, VQ2S = 4.0 Vdc, Id * 5.0 mAdc, f = 1.0 MHz)
Reverse Transfer Capacitance
(Vds = 15 Vdc, VQ2S = 4.0 Vdc, Id 3= 5.0 mAdc, f = 1.0 MHz)
Output Capacitance
(Vds = 15 Vdc, VQ2S = 4.0 Vdc, Id * 5.0 mAdc, f = 1.0 MHz)
Symbol
Min
V (BR)DSX
25
V(BR)G1SSF
7.0
V(BR)G1SSR -7.0
V(BR)G2SSF
7.0
V(BR)G2SSR
'G1SSF
-7.0
-
!G1SSR
!G2SSF
-
—
'G2SSR
-
>DSS
Vfs
Cj ss
Crss
Cqss
10
—
0.005
0.5
Typ
-
-
-
-
-
-
-
-
-
13
3.3
0.023
2.0
Max
-
22
-22
22
-22
20
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
nAdc
-20 nAdc
-10 pAdc
20 nAdc
-20
"•
-10
nAdc
fiAdc
mAdc
20
7.0
0.03
4.0
mmhos
pF
PF
PF
6-89
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ 3N209 Schematic.PDF ] |
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