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PDF MV409 Data sheet ( Hoja de datos )
| Número de pieza | MV409 | |
| Descripción | Silicon Tuning Diode | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MV409 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diodes
These devices are designed for general frequency control and tuning applications.
They provide solid–state reliability in replacement of mechanical tuning methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
31
Cathode
Anode
SOT–23
21
Cathode
Anode
TO–92
MAXIMUM RATINGS
Rating
Symbol MBV409 MMBV409LT1 Unit
Reverse Voltage
Forward Current
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR 20 Vdc
IF 200 mAdc
PD
280
2.8
225 mW
1.8 mW/°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
TJ +125
Tstg –55 to +150
°C
°C
MMBV409LT1 = X5, MV409 = MV409
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 15 Vdc)
Diode Capacitance Temperature Coefficient
(VR = 3.0 Vdc, f = 1.0 MHz)
V(BR)R
IR
TCC
20
—
—
MMBV409LT1
MV409
Motorola Preferred Devices
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
1
2
CASE 182–02, STYLE 1
TO–92 (TO–226AC)
Typ Max Unit
— — Vdc
— 0.1 µAdc
300 — ppm/°C
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Device
Min Nom Max
MMBV409LT1, MV409
26 29 32
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
Min
200
CR, Capacitance Ratio
C3/C8
f = 1.0 MHz(1)
Min Max
1.5 1.9
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–127
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MV409.PDF ] | |
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