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Teilenummer | J305 |
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Beschreibung | N-Channel JFETs | |
Hersteller | Vishay | |
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Gesamt 7 Seiten N-Channel JFETs
J304/305
Vishay Siliconix
PRODUCT SUMMARY
Part Number
J304
J305
VGS(off) (V)
−2 to −6
−0.5 to −3
V(BR)GSS Min (V)
−30
−30
gfs Min (mS)
4.5
3
IDSS Min (mA)
5
1
FEATURES
D Excellent High Frequency Gain: J304,
Gps 11 dB (typ) @ 400 MHz
D Very Low Noise: 3.8 dB (typ) @
400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA
BENEFITS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
APPLICATIONS
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The J304/305 n-channel JFETs provide high-performance
amplification, especially at high-frequency. These products
are available in tape and reel for automated assembly (see
Package Information).
For similar products in TO-236 (SOT-23) packages, see the
2N/SST5484 series data sheet, or in TO-206AF (TO-72)
packages, see the 2N/SST4416 series data sheet.
TO-226AA
(TO-92)
S1
D2
G3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
www.vishay.com
1
J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
20 Equivalent Input Noise Voltage vs. Frequency
VDS = 10 V
16
12
8
4
0
10
ID = 5 mA
VGS = 0 V
100 1 k 10 k
f − Frequency (Hz)
100 k
20 Output Conductance vs. Drain Current
VGS(off) = −3 V
16
TA = −55_C
12
8
4
0
0.1
125_C
25_C
VDS = 10 V
f = 1 kHz
1
ID − Drain Current (mA)
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70236.
www.vishay.com
6
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ J305 Schematic.PDF ] |
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