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PDF MUN5233T1 Data sheet ( Hoja de datos )
| Número de pieza | MUN5233T1 | |
| Descripción | Bias Resistor Transistors | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device
and its external resistor bias network. The BRT (Bias Resistor Transistor)
contains a single transistor with a monolithic bias network consisting of two
resistors; a series base resistor and a base-emitter resistor. The BRT eliminates
these individual components by integrating them into a single device. The use
of a BRT can reduce both system cost and board space. The device is housed
in the SC-70/SOT-323 package which is designed for low power surface mount
applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC-70/SOT-323 package can be soldered using
wave or reflow. The modified gull-winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
R1
PIN1 R2
BASE
(INPUT)
PIN3
COLLECTOR
(OUTPUT)
PIN2
EMITTER
(GROUND)
MUN5211T1
SERIES
Motorola Preferred Devices
NPN SILICON
BIAS RESISTOR
TRANSISTORS
3
1
2
CASE 419-02, STYLE 3
SC-70/SOT-323
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
THERMAL CHARACTERISTICS
VCBO
VCEO
IC
PD
50
50
100
*150
1.2
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
RθJA
TJ, Tstg
TL
833
– 65 to +150
260
10
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1(2)
MUN5216T1(2)
MUN5230T1(2)
MUN5231T1(2)
MUN5232T1(2)
MUN5233T1(2)
MUN5234T1(2)
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C/W
°C
°C
Sec
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–769
1 page  
MUN5211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212T1
1
IC/IB = 10
0.1 TA = –25°C
0.01
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
–25°C
0.001
0
4
3
2
1
0
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
50
f = 1 MHz
IE = 0 V
TA = 25°C
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
50
100
VO = 0.2 V
10
1
10
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100 75°C 25°C
TA = –25°C
10
1
0.1
0.01
0.001
0
VO = 5 V
2 46 8
Vin, INPUT VOLTAGE (VOLTS)
10
Figure 10. Output Current versus Input Voltage
TA = –25°C
75°C 25°C
0.1
0 10
20
30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–773
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MUN5233T1.PDF ] | |
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