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BSS138LT1 Schematic ( PDF Datasheet ) - WILLAS

Teilenummer BSS138LT1
Beschreibung Power MOSFET ( Transistor )
Hersteller WILLAS
Logo WILLAS Logo 




Gesamt 5 Seiten
BSS138LT1 Datasheet, Funktion
WILLAS
FM120-M+
BSS8LTT1HRU
P1.o0AwSeUrRFMACOESMFOEUNTT S2C0H0OTmTKBAYARmRpIEsR,R5EC0TIVFIoERltSs-20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
SOD-123H
optimize board space.
N–CLohwaponwner eloslsS, hiOghTeffic2ien3cy.
High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
TypicaHligahpspulricgaetcioanpsabailritey. dc–dc converters, power management in
portabGleuaardnrdingbafottreorvyerpvoolwtaegreepdroptreocdtiuocnt.s such as computers, printers,
PCM••CSUIilAltircacohanirgedhps-i,tsapcxeeiaelllduplsalawrniatacnrhdcinhcgipo. ,rmdleetsasl
telephones.
silicon junction.
LowLeTahdr-ferseheopladrtVsomlteaegteen(VvirGoSn(tmh)e: n0t.a5lVs.t.a.1n.d5aVrd)smoaf kes
it
ideal
for
low
0.071(1.8)
0.056(1.4)
voltMaIgLe-SaTpDp-l1ic9a5t0io0n/s228
MinRHioaaHltouSgreepnroSfrdeOuecTtpfroo2rd3puacSct kufoirnrfgapaccocekdieMngsoucufofnidxet"GPsu"affcixka"Hg"e saves board space
PMb-Fercehe apancikcaagledisaatvaailable
RoEHpSoxpyro: UdLu9c4t -fVo0r rpaatecdkifnlagmceordeetarsduafnfitx ”G”
HaCloagseen: Mfreoledepdropdlausctitc,foSrOpDa-c12k3inHg code suffix “H”
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
SOT –23
0.031(0.8) Typ.
Method 2026
Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.011 gram
N - Channel
3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive load, derate current b1y 20%
MARKING DIAGRAM
& PIN ASSIGNMENT
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
2 12 13 14 15 16
18 10
115 120
VRRM
20
30
40
50
60
VRMS
14
21
28
35
42
J180 100
56 70
150 200 Volts
105 140 Volts
VDC 20 30 40 50 60
80 100 150 200 Volts
Maximum Average Forward Rectified Current
IO
  MAXIMUM RATINGS (TA = 25oC unless othe rwise noted)
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimposed on rateRdalotaindg(JEDEC method)
TypDicraaliTnhetorm–Saol RurecseisVtaonlctaeg(eNote 2)
Typical Junction Capacitance (Note 1)
OpeGraattieng–tToemSopeurracteurVeoRltaanggee– Continuous
Symbol
VDSRSCΘJJA
VGSTJ
Value
50
± 20
Unit
 
Vdc 
-5V5dtco +125
1.0
  J1 = Device Code
30 M = Month Code
40  
  1O20RDERING -55INtoF+O1R50MATION
Amps
 
Amps
℃/W
PF
StorDargaeinTeCmurpreernatture Range
  – Continuous @ TA = 25°C
– Pulsed DraCinHACRuArrCenTtE(RtpISTI1C0Sµs)
TSTG
mA
D-e6v5icteo +175 Package
Shipping
ID 200
IDSMYMBOL F8M01020-MH FM130-MH FM140-MH FM150-MBHSFSM113680L-MTH1FM180-SMOH TFM–213100-MH30F0M011T5a0p-MeH&FRM1e2e0l0-MH UNIT
MaxTimotuaml PFoowrwerarDdisVsoipltaagtieonat@1.0TAAD=C25°C
PD VF
MaxOimpuemratAinvgeraangde RSetovreargsee CTeumrrepnetraattur@e T A=25℃ TJ, TstgIR
RatedRDaCngBelocking Voltage
@T A=125℃
225
– 55 to
150
mW 0.50
°C
0.70
0.5
10
0.85
0.9 0.92 Volts
 
mAmps
 
NOTTEhSe: rmal Resistance – Junction–to–Ambient RθJA
556 °C/W
1- MMeaasxuirmedumat 1LeMaHdZTaenmd paeppralietudrerevfoersSeovlodletarginegof 4.0 VDTCL . 260 °C
2- TherPmuarlpRoesseisst,anfocre1F0rosmecJuonncdtison to Ambient
 
 
2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.





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