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PDF MUN5115T1 Data sheet ( Hoja de datos )
| Número de pieza | MUN5115T1 | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | LRC | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system cost
and board space. The device is housed in the SC–70/SOT–323 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–70/SOT–323 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page2 of this data
sheet.
MUN5111T1
SERIES
PNP SILICON
BIAS RESISTOR
TRANSISTORS
3
1
2
CASE 419, STYLE 3
SOT–323 (SC–70)
PIN 1
BASE
(INPUT)
R
1
R
2
PIN 2
COLLECTOR
(OUTPUT)
PIN 3
EMITTER
(GROUND)
MARKINGDIAGRAM
6X M
6 X =Specific Device Code
X =(See Marking Table)
M =Date Code
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50 Vdc
Collector-Emitter Voltage
VCEO
50 Vdc
Collector Current
IC 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation
PD 202 (Note 1)
TA = 25°C
310 (Note 2)
Derate above 25°C
1.6 (Note 1)
2.5 (Note 2)
Thermal Resistance –
RθJA 618 (Note 1)
Junction-to-Ambient
403 (Note 2)
Thermal Resistance –
RθJL 280 (Note 1)
Junction-to-Lead
332 (Note 2)
Junction and Storage
TJ, Tstg
–55 to +150
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
mW
°C/W
°C/W
°C/W
°C
MUN5111T1 Series–1/11
1 page  
1
IC/IB = 10
ā0.1
LESHAN RADIO COMPANY, LTD.
MUN5111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5111T1
1000
VCE = 10 V
TAĂ=Ă-25°C
75°C
25°C
100
TAĂ=Ă75°C
25°C
-25°C
ā0.01
0
ā20 ā40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
10
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
4 100 75°C 25°C
f = 1 MHz
3
lE = 0 V
TA = 25°C
10
TAĂ=Ă-25°C
1
2
ā0.1
1
ā0.01 VO = 5 V
0
0
10
20
30 40
50
ā0.001
0 1 ā2 3 ā4 ā5 ā6 ā7 ā8 ā9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
TAĂ=Ă-25°C
75°C
25°C
ā0.1
0 10 ā20 ā30 ā40 ā50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
MUN5111T1 Series–5/11
5 Page 
LESHAN RADIO COMPANY, LTD.
MUN5111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1
1 1000
TA = –25°C
75°C
0.1 100
75°C
TA = –25°C
25°C
25°C
IC/IB = 10
0.01
0
5
10 15 20 25 30 35 40 45 50
IC, COLLECTOR CURRENT (mA)
Figure 33. Maximum Collector Voltage versus
Collector Current
10
1
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
Figure 34. DC Current Gain
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
f = 1 MHz
IE = 0 V
TA = 25°C
100
10
1
75°C
25°C
TA = –25°C
0.1
10 20 30 40 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 35. Output Capacitance
0.01
VO = 5 V
60
0.001
01
2
3
4
5
6
7
8
9 10 11
Vin, INPUT VOLTAGE (VOLTS)
Figure 36. Output Current versus Input Voltage
100
VO = 0.2 V
TA = –25°C
10 75°C
25°C
1
05
10 15 20
IC, COLLECTOR CURRENT (mA)
25
Figure 37. Input Voltage versus Output Current
MUN5111T1 Series–11/11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MUN5115T1.PDF ] | |
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