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PDF MUN5112T1G Data sheet ( Hoja de datos )
| Número de pieza | MUN5112T1G | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | ON Semiconductor | |
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MUN5111T1 Series
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−70/SOT−323 package which is designed for low power
surface mount applications.
Features
• Pb−Free Packages are Available
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC−70/SOT−323 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel − Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50 Vdc
Collector-Emitter Voltage
VCEO
50 Vdc
Collector Current
IC 100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD 202 (Note 1) mW
310 (Note 2)
1.6 (Note 1) °C/W
2.5 (Note 2)
Thermal Resistance, Junction-to-Ambient
RqJA
618 (Note 1) °C/W
403 (Note 2)
Thermal Resistance, Junction-to-Lead
RqJL
280 (Note 1) °C/W
332 (Note 2)
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
TJ, Tstg
−55 to +150
°C
http://onsemi.com
PNP SILICON
BIAS RESISTOR
TRANSISTORS
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
3
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
6x M
6x = Specific Device Code
(See Order Info Table)
M = Date Code
ORDERING INFORMATION
See specific ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 7
1
Publication Order Number:
MUN5111T1/D
1 page  
1
IC/IB = 10
0.1
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1
1000
TA = −25°C
75°C
25°C
100
VCE = 10 V
TA = 75°C
25°C
−25°C
0.01
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
10
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
4 100 75°C 25°C
f = 1 MHz
3
lE = 0 V
TA = 25°C
10
TA = −25°C
1
2
0.1
1
0.01 VO = 5 V
0
0
10
20
30 40
50
0.001
0
1 2 3 45
6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
TA = −25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
http://onsemi.com
5
5 Page 
MUN5111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1
1 1000
TA = −25°C
75°C
0.1 100
75°C
TA = −25°C
25°C
25°C
IC/IB = 10
0.01
0 5 10 15 20 25 30 35 40 45 50
IC, COLLECTOR CURRENT (mA)
Figure 33. Maximum Collector Voltage versus
Collector Current
10
1
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
Figure 34. DC Current Gain
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
f = 1 MHz
IE = 0 V
TA = 25°C
100
10
1
75°C
25°C
TA = −25°C
0.1
10 20 30 40 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 35. Output Capacitance
0.01
VO = 5 V
0.001
60 0 1 2 3 4 5 6 7 8 9 10 11
Vin, INPUT VOLTAGE (VOLTS)
Figure 36. Output Current versus Input Voltage
100
VO = 0.2 V
10
TA = −25°C
75°C
25°C
1
05
10 15 20
IC, COLLECTOR CURRENT (mA)
25
Figure 37. Input Voltage versus Output Current
http://onsemi.com
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MUN5112T1G.PDF ] | |
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