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PDF MMUN2132LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMUN2132LT1 | |
| Descripción | PNP SILICON BIAS RESISTOR TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMUN2111LT1/D
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
PIN 3
COLLECTOR
(OUTPUT)
• The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of PIN 1
damage to the die.
BASE
• Available in 8 mm embossed tape and reel. Use the (INPUT)
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
R1
R2
PIN 2
EMITTER
(GROUND)
MMUN2111LT1
SERIES
Motorola Preferred Devices
PNP SILICON
BIAS RESISTOR
TRANSISTOR
3
1
2
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
Symbol
VCBO
VCEO
IC
PD
Value
50
50
100
*200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/°C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
Symbol
RθJA
TJ, Tstg
TL
Value
625
– 65 to +150
260
10
Unit
°C/W
°C
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1(2)
A6A
A6B
A6C
A6D
A6E
R1 (K)
10
22
47
10
10
R2 (K)
10
22
47
47
∞
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMUN2111T1/D)
©MMoottoorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1
1 page  
10
IC/IB = 10
1
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112LT1
MMUN2111LT1 SERIES
TA = –25°C
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
–25°C
0.1
0.01
0
4
3
2
1
0
0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
80
f = 1 MHz
lE = 0 V
TA = 25°C
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
50
10
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100 75°C 25°C
TA = –25°C
10
1
0.1
0.01 VO = 5 V
0.001 0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
TA = –25°C
10 25°C
75°C
1
0.1
0 10
20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MMUN2132LT1.PDF ] | |
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