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PDF MMBTH24LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBTH24LT1 | |
| Descripción | VHF Mixer Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
VHF Mixer Transistor
NPN Silicon
• Designed for
• fT = 400 MHz Min @ 8 mA
COLLECTOR
3
1
BASE
2
EMITTER
MMBTH24LT1
Motorola Preferred Device
1
2
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
DEVICE MARKING
VCEO
VCBO
VEBO
IC
30 Vdc
40 Vdc
4.0 Vdc
50 mAdc
MMBTH24LT1 = M3A
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
RθJA
PD
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
RθJA
TJ, Tstg
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0)
Collector Cutoff Current (VCB = 15 Vdc, IE = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
30
40
4.0
—
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 50 nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2–424
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBTH24LT1.PDF ] | |
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