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PDF MRF629 Data sheet ( Hoja de datos )
| Número de pieza | MRF629 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MRF629
CASE 79-03, STYLE 5
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Storage Temperature
Symbol
v CEO
VCBO
VEBO
"c
PD
Tstg
Value
16
36
4.0
400
5.0
50
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 50 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage
C(l = 50 mAdc, V B e = 0)
Emitter-Base Breakdown Voltage
E(l = 1.0 mAdc, Iq = 0)
Collector Cutoff Current
(VC B = 15 Vdc, El = 0)
ON CHARACTERISTICS
DC Current Gain
(lC = 100 mAdc, Vce = 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(Vcb = 12.5 Vdc, El = 0, f = 1.0 MHz)
FUNCTIONAL TEST (FIGURE 1)
Common-Emitter Amplifier Power Gain
(Vcc = 12.5 Vdc, P ut = 2.0 W, f = 470 MHz)
Collector Efficiency
(VC c
=
12- 5
Vdc
'
p out
=
2.0 W, f
=
470 MHz)
Symbol
v (BR)CEO
V (BR)CES
V(BR)EBO
!CBO
16
36
4.0
—
hFE
Cobo
20
—
Gp E
V
8.0
50
— Vdc
— Vdc
— Vdc
1.0 mAdc
—200
15 pF
— dB
—%
7-206
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MRF629.PDF ] | |
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