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PDF MRF532 Data sheet ( Hoja de datos )
| Número de pieza | MRF532 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
@Total Device Dissipation T"c = 25°C
Derate above 25°C
Storage Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
vCEO
VCBO
VEBO
pd
T stg
Value
80
80
3.5
2.5
14.3
- 60 to + 200
Unit
Volts
Volts
Volts
Watts
mW/"C
°C
Symbol
R&jc
Max
70
Unit
°C/W
MRF532
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
PNP SILICON
f
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 10 mA)
Collector-Base Breakdown Voltage
dC = 0.1 mA)
Emitter-Base Breakdown Voltage
E(l = 0.1 mA)
Collector Cutoff Current
(VC e = 75 V)
ON CHARACTERISTICS
DC Current Gain
dC = 5.0 mA, Vqe = TO V)
Collector-Emitter Saturation Voltage
dC = 10 mA, Ib = 1.0 mA)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 50 mA, Vce = 25 V, f = 100 MHz)
Output Capacitance
(Vcb = 10 V, f = 1.0 MHz)
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
ices
Min
80
80
3.5
,
—
Max
—
—
—
10
"FE
v CE(sat)
25
—
—
1.0
—fT 500
*-obo
—
4,0
Unit
Vdc
Vdc
Vdc
juAdc
-
Vdc
4
MHz
PF
MRF534, MRF536 For Specifications, See MM4049 Data.
7-169
1 page | ||
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