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PDF MRF531 Data sheet ( Hoja de datos )
| Número de pieza | MRF531 | |
| Descripción | HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
@Total Device Dissipation 1q = 25°C
Derate above 25°C
Storage Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
v CBO
Vebo
Pd
Tsta
Value
100
100
3.5
2.5
14.3
-65 to +200
Unit
Vdc
Vdc
Vdc
Watts
mW/°C
°C
Symbol
Rfljc
Max
70
Unit
°C/W
MRF531
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 0.1 mAdc, lg = 0)
Emitter-Base Breakdown Voltage
E(l = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(Vqe = 75 Vdc, Vbe = 0)
ON CHARACTERISTICS
DC Current Gain
c(l = 5.0 mAdc, Vqe = 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 1.0 mAdc)
SMALL SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 50 mAdc, VC E = 25 Vdc, f = 100 MHz)
Output Capacitance
(VcB = 10 Vdc, El = 0, f = 1.0 MHz)
Input Capacitance
(V BE = 3.0 Vdc, lc = 0, f = 1.0 MHz)
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
Ices
Min Typ Max
|
J
—100
—
—100
—
— —3.5
— — 10
— —hFE 25
— —vCE(sat)
1.0
*T
C bo
Cibo
500 800
—
—— 4.0
— 9.0 —
Unit
I
Vdc
Vdc
Vdc
/xAdc
—
Vdc
MHz
PF
pF
7-167
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MRF531.PDF ] | |
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