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Teilenummer | MMBT2222A |
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Beschreibung | NPN Silicon Switching Transistor | |
Hersteller | Infineon | |
Logo | ||
Gesamt 8 Seiten NPN Silicon Switching Transistor
• Low collector-emitter saturation voltage
• Complementary type:
SMBT2907A / MMBT2907A (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
SMBT2222A/MMBT2222A
32
1
Type
Marking
SMBT2222A/MMBT2222A s1P
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
TS ≤ 77 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
40
75
6
600
330
150
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
≤ 220
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2011-08-19
SMBT2222A/MMBT2222A
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
360
mW
300
270
240
210
180
150
120
90
60
30
00 15 30 45 60 75 90 105 120 °C 150
TS
Delay time td = ƒ(IC)
Rise time tr = ƒ(IC)
10 3 SMBT 2222/A
Ptot max
Ptot DC
5
10 2
5
10 1
5
EHP00740
D = tp
T
tp
T
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
tp
Storage time tstg = ƒ(IC)
Fall time tf = ƒ(IC)
10 0
10 3 SMBT 2222/A
ns
5
td,tr
tr
10 2
EHP00744
VCC = 30 V
hFE = 10
tr VBE = 5 V
10 3 SMBT 2222/A
ns
5
t s,t f
10 2
EHP00745
ts
hFE = 10
5
VBE = 2 V
td
10 1
10 0
td
VBE = 0 V
5 10 1
5 10 2 mA 5 10 3
ΙC
5
t f hFE = 20
hFE = 10
10 1
10 1
5 10 2
mA 5
ΙC
10 3
6 2011-08-19
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ MMBT2222A Schematic.PDF ] |
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