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Teilenummer | AP0203GMT-L |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 5 Seiten Advanced Power
Electronics Corp.
AP0203GMT-L
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP0203 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6L package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
ID
30V
2.2mΩ
155A
D
D
D
D
S
S
S
G
PMPAK® 5x6L
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TC=25℃
PD@TA=25℃
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip)
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
30
+20
155
38
30
300
83.3
5
28.8
-55 to 150
-55 to 150
V
V
A
A
A
A
W
W
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data & specifications subject to change without notice
Value
1.5
25
Units
℃/W
℃/W
1
201604271
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ AP0203GMT-L Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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