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Teilenummer | DG1M3 |
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Beschreibung | Schottky Barrier Diode | |
Hersteller | SHINDENGEN | |
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Gesamt 4 Seiten Single
Schottky Barrier Diode
DG1M3
OUTLINE
Package G1F
30V 1A
C00
Feature
Unit : mm
RATINGS
Absolute Maximum Ratings
For details of the outline dimensions. refer to our web site or Semiconduc-
tor Short Form Catalog. As for the marking, refer to the specification
“Marking, Terminal Connection”.
l
Item
Storage Temperature
Operating Junction Temperature
Maximum Reverse Voltage
Average Rectified Forward Current
Peak Surge Forward Current
Symbol
Conditions
Tstg
Tj
VRM
Io
IFSM
50Hz sine wave, Resistance load, Tj 27
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj 25
Ratings
Unit
Forward Voltage
Reverse Current
Junction Capacitance
Electrical Characteristics
Pulse measurement
VF
Pulse measurement
IR Pulse measurement
Cj
l
Thermal Resistance
θja Junction to ambient
θjl Junction to lead
Measured on the 1 1 inch phenol substrate (pattern area : 32.6mm2)
Measured on the 1 1 inch phenol substrate (pattern area : 160mm2)
Measured on the 2 2 inch alumina substrate (pattern area : 2,100mm2)
www.shindengen.co.jp/product/semi/
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ DG1M3 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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