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PDF SUM110N08-07P Data sheet ( Hoja de datos )
| Número de pieza | SUM110N08-07P | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SUM110N08-07P
Vishay Siliconix
N-Channel 75 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
75 0.007 at VGS = 10 V
ID (A)
110d
Qg (Typ.)
69
TO-263
FEATURES
• TrenchFET® Power MOSFETS
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Synchronous Rectification
D
G DS
Top View
Ordering Information: SUM110N08-07P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
G
S
N-Channel MOSFET
Limit
75
± 20
110d
103
180
50
125
208.3b
3.75
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
Symbol
RthJA
RthJC
Limit
40
0.6
Unit
°C/W
Document Number: 68637
For technical questions, contact: [email protected]
www.vishay.com
S12-1616-Rev. B, 09-Jul-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 1000
100
150 °C
10
25 °C
10
1
SUM110N08-07P
Vishay Siliconix
Limited by RDS(on)*
10 µs
100 µs
1 ms
10 ms
100 ms, DC
1
0.00001 0.0001
0.001
0.01
TAV (s)
0.1 1.0
Single Pulse Avalanche Current Capability vs. Time
150
0.1 TC = 25 °C
Single Pulse
BVDSS
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
120
90 Package Limited
60
30
0
0 25 50 75 100 125
TC - Case Temperature (°C)
Current Derating*, Junction-to-Case
1
Duty Cycle = 0.5
150
* The power dissipation PD is based on TJ(max) = 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see /www.vishay.com/ppg?68637.
Document Number: 68637
S12-1616-Rev. B, 09-Jul-12
www.vishay.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SUM110N08-07P.PDF ] | |
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