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PDF BAS21AHT1G Data sheet ( Hoja de datos )
| Número de pieza | BAS21AHT1G | |
| Descripción | Low Leakage Switching Diode | |
| Fabricantes | ON Semiconductor | |
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BAS21AHT1G
Low Leakage
Switching Diode
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR Continuous Reverse Voltage
VRRM Repetitive Peak Reverse Voltage
IF Peak Forward Current
IFM(surge) Peak Forward Surge Current
THERMAL CHARACTERISTICS
250 Vdc
250 Vdc
200 mAdc
625 mAdc
Symbol
Characteristic
Max Unit
PD Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
200 mW
1.57 mW/°C
RqJA
Thermal Resistance,
Junction−to−Ambient
635 °C/W
TJ, Tstg Junction and Storage Temperature
Range
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 Minimum Pad
http://onsemi.com
LOW LEAKAGE
SWITCHING DIODE
1
CATHODE
2
ANODE
MARKING
2 DIAGRAM
1
SOD−323
CASE 477
STYLE 1
AA M G
G
AA = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAS21AHT1G
SOD−323 3000/Tape & Reel
(Pb−Free)
NSVBAS21AHT1G SOD−323 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 2
1
Publication Order Number:
BAS21AHT1/D
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BAS21AHT1G.PDF ] | |
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