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PDF MMBT3904TT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT3904TT1 | |
| Descripción | General Purpose Transistors | |
| Fabricantes | WILLAS ELECTRONIC | |
| Logotipo |  |
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WILLAS
FM120-M+
MMBT3904TTT1HRU
1.0AGSeURnFAeCrEaMlOPUuNTrSpCoHOsTeTKTY BrAaRnRsIERisRtEoCTrIsFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
NP•NFBeaStacilhtiucproroecnesss design, excellent power dissipation offers
FEAbTeUttRerEreverse leakage current and thermal resistance.
ƽ•SLoimopwtpimlipfiierzosefCibleiorcsauuridtrfDasepcseaigcmneo.. unted application in order to
ƽ• RLooHwSpopwroedruloctsfso,rhpigahckeinffgiccieondcey.suffix "G"
• HHaiglohgceunrrfreenet pcaropdaubcitlitfoy,r lpoawcfkoinrwg acroddveosltuaffgixe "dHro" p.
• High surge capability.
OR•• DUGElutRraarIdNhriGignhgI-NsfoFprOeoeRvdeMsrAvwoiTtlctIaOhgiNnegp. rotection.
•DSeivliiccoen epitaxial plaMnaarrkcihnigp, metal siSlichoipnpjiunngction.
M•MLBeTa3d9-0fr4eTeTp1arts meet MenAvironment3a0l 0s0ta/Tnadpaer&dRs eoef l
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAXMIMeUcMhRaATnINicGaSl data
• EpoRxayti:nUgL94-V0 rated flamSeyrmebtaorldant Value
Unit
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT-523
0.040(1.0)
0.024(0.6)
C•olCleactsoer–:EMmoitltdeer dVoplltaagsetic, SOD-V12C3EOH 40 Vdc
C•olTleecrtmori–nBaalse:PVloaltaegdeterminals,VsoClBdOerable per 6M0IL-STD-75V0d,c
0.031(0.8) Typ.
0.031(0.8) Typ.
3
COLLECTOR
Emitter–Base VMolteatgheod 2026 V EBO
C•olPleocltaorr
iCtyur:rIenndt
i—caCteodntbinyucoautsh
o
d
eI
b
C
a
n
d
• Mounting Position : Any
THE•RWMeAiLghCt H: AApRpAroCxTimEaRteISdT0I.C0S11 gram
Characteristic
6.0 Vdc
200 mAdc
Symbol
Max
Dimensions in1inches and (millimeters)
BASE
Unit
2
EMITTER
Total DevicMeADXissIMipaUtioMn FRRA–T4INBoGarSd, A(1N) D ELECTRPIDCAL CHAR20A0CTERISmTWICS
RatingTsAa=t 25℃°C ambient temperature unless otherwise specified.
SingleDpehraaste ahbaolfvwea2v5e°,C60Hz, resistive of inductive load.
1.6 mW/°C
For caTphaecirtmivael lRoaedsi,sdtaenracete, Jcuunrrcetinotnbtyo 2A0m%bient
Total Device DisRsiApaTtIiNonGS
MarkingFCRo-4deBoard(2), TA = 25°C
MaximuDmerRaetecuarrbeonvteP2e5a°kCReverse Voltage
MaximuTmheRrMmSalVRoeltsaigsetance, Junction to Ambient
MaximuJmunDcCtioBnloacnkdinSgtVoroaltgaegeTemperature
RθJA 600 °C/W
SYMBOLPFDM120-MH FM1303-0M0H FM140-MHmFWM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
VRRM
20
VRMS RθJA 14
VDC TJ , Tst2g 0
13 14 15
302.4 40 mW/°5C0
21400 28 °C/W35
–5350to +15040 °C 50
16
60
42
60
18 10
115 120
80 100 150 200
56 70 105 140
80 100 150 200
Maximum Average Forward Rectified Current
IO
DEVICE MARKING
Peak Forward Surge Current 8.3 ms single half sine-wave
superimMpoMsBedTo3n90ra4teTdT1loa=dM(JAEDEC method)
IFSM
TypEicLaEl TChTerRmIaCl AReLsiCstHanAceR(ANCotTeE2R) ISTICS (TA = 25°CRuΘnJAless otherwise not ed.)
Typical Junction Capacitance (Note 1)
CJ
Operating TemperatuCrehRaarancgteeristic
TJ Symbol -55 to M+1in25
1.0
30
40
120
Max U nit
-55 to +150
StoOraFgeFTCeHmApeRraAtuCreTREaRnIgSeTICS
Collector–EmCiHtteArRBArCeaTkEdRoISwTnICVoSltage(3)
Maximu(ImCF=o1rw.0amrdAVdoclt)age at 1.0A DC
MaximuCmolAlevcetorarg–eBaRseeveBrrseeaCkduorrwennt Vaot lta@gTeA=25℃
Rated D(ICC =Blo1c0kµinAgdVco) ltage
@T A=125℃
Emitter–Base Breakdown Voltage
NOTES:(I E = 10 µAdc)
TSTG
- 65 to +175
SYMBOLVF(BMR1)C2E0O-MH
40
FM130-MH
FM140-MH
—
FM150-MH
Vdc
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
FM1200-MH
VF
V (BR)CBO
IR
V (BR)EBO
0.50
60
6.0
0.70
— Vdc0.5
10
— Vdc
0.85
0.9 0.92
1- MeasBuraesdeaCt 1uMtoHffZCaunrdreanptplied reverse voltage of 4.0 VDC.
I BL
— 50 nAdc
2- Therm( aVl RCEe=sis3t0anVcedcF,roVmEBJu=nc3t.io0nVtodcA,m)bient
Collector Cutoff Current
( V CE = 30Vdc, V BE = 3.0Vdc )
I CEX — 50 nAdc
1. FR-4 Minimum Pad.
2. FR-4 1.0 x 1.0 Inch Pad.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
2012-112012-06
WILLASWEILLLEACSTRELOENCICTRCOONRICP.COR
1 page  
WILLAS
FM120-M+
MMBT3904TTT1HRU
1.0AGSUeRnFAeCrEaMlOPUNuTrSpCHoOsTTeKYTBrAaRnRIsERisRtEoCTrIFsIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipationhoPffAerRs AMETERS
•
better reverse
Low profile sur
leakage curre
face mounted
nt and
applic
athtieornm(VianlCorEre=dsei1sr0ttaoVndcec,.
f
=
1.0
kHz,
T
A
=
25°C)
SOD-123H
optimize board space.
• Lo30w0 power loss, high efficiency.
• High current capability, low forward voltage drop.
100
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
50
• G2u0a0rdring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
20
0.071(1.8)
0.056(1.4)
• Le10a0d-free parts meet environmental standards of
MIL-STD-19500 /228
• Ro7H0S product for packing code suffix "G"
10
5
MHea5lco0ghenafrneei
product
cal d
for
at
packing
a
code
suffix
"H"
2
• Ep3o0xy : UL94-V0 rated flame retardant
1
0.040(1.0)
0.024(0.6)
• Case0.:1Mold0e.2d p0l.a3 stic0,.5SOD-11.023H 2.0 3.0 5.0
10
•
Terminals
:
P
l
aI tCe,
dCtOeLrmLEinCaTlOs,Rs
oClUdeRrRaEbNleTp(emrAM) I
L
-
S
T
D
-
7
5
,
0
MethoFdig2u0r2e611. Current Gain
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
0.031(0.8) Typ.
0.031(0.8) Typ.
I C , COLLECTOR CURRENT (mA)
Figure 12. Output Admittance
• Po2l0arity : Indicated by cathode band
10 Dimensions in inches and (millimeters)
• Mounting Position : Any
10
• Weight : Approximated 0.011 gram
5.0
7.0
5.0
MAXIMUM RATINGS AND ELECTRICAL CHAR3A.0CTERISTICS
Ratings at 22.50℃ ambient temperature unless otherwise specified.
2.0
Single phase half wave, 60Hz, resistive of inductive load.
1.0
For capacitive load, derate current by 20%
0.5 RATINGS
1.0
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12 13 0.7 14 15 16
18 10
115 120
Maximum Re0c.2urrent Peak Reverse Voltage
Maximum RMS0V.1oltage0.2 0.3 0.5
1.0
VRRM
2.0 3.V0 RM5S.0
20
1140
30 0.5 40 50 60
21 0.1 28 0.2 0.335 0.5 421.0
80
25.06 3.0
100
57.00
150
10 105
200
140
Maximum DC Blocking VoI lCta,gCeOLLECTOR CURRENT (VmDAC)
20
30
40 I C , C50OLLECT6O0R CURR8E0NT (mA1) 00
Maximum Average ForwarFdiRgeucrtiefie1d3C. uInrrpenutt ImpedancIOe
Figure 14. Voltag1e.0Feedback Ratio
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junctio2.n0 Capacitance (Note 1)
TYPICAL STATIC CHARACTERISTICS
RΘJA
CJ
Operating Temperature Range
T JT=J+125°C
-55 to +125
30
40
120
-5V5CtEo= +1.105V0
Storage Temp1e.0rature Range
TSTG
+25°C
- 65 to +175
150
200
0.7 CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forw0.5ard Voltage at 1.0A DC
VF –55°C
0.50
0.70
0.85 0.9 0.92
Maximum Average Reverse Current at @T A=25℃
Rated DC Bloc0.k3ing Voltage
@T A=125℃
IR
0.5
10
NOTES:
0.2
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Res0is.1tance From Junction to Ambient
0.1
0.2 0.3
0.5
0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
I C , COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
2012-112012-06
WILLASWEILLLEACSTERLOENCITCRCOONRICPC. OR
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MMBT3904TT1.PDF ] | |
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