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WNM2046B Schematic ( PDF Datasheet ) - WillSEMI

Teilenummer WNM2046B
Beschreibung MOSFET ( Transistor )
Hersteller WillSEMI
Logo WillSEMI Logo 




Gesamt 7 Seiten
WNM2046B Datasheet, Funktion
WNM2046B
Single N-Channel, 20V, 0.71A, Power MOSFET
VDS (V)
20
Typical Rds(on) (Ω)
0.220@ VGS=4.5V
0.260@ VGS=2.5V
0.315@ VGS=1.8V
WNM2046B
Http://www.sh-willsemi.com
G
S
D
Descriptions
DFN1006-3L
The WNM2046B is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2046B is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN1006-3L
Applications
D
GS
Pin configuration (Top view)
6 = Device Code
* = Month (A~Z)
Marking
Small Signal Switching
Small Moto Driver
Order information
Device
WNM2046B-3/TR
Package
DFN1006-3L
Shipping
10K/Reel&Tape
Will Semiconductor Ltd.
1
Aug, 2014- Rev.1.0






WNM2046B Datasheet, Funktion
WNM2046B
1 Duty cycle=0.5
0.1
0.01
0.2
0.1
0.05
0.02
1E-3
single pulse
1E-4
1E-6
1E-5
1E-4
PDM
t1
t2
1. Duty Cycle, D=t1/t2
2. Per Unit Base =RθJA= 395°C/W
3. TJM-TA = PDM RθJA
4. Surface Mounted
1E-3 0.01
0.1
1
10
Square Wave Pulse Duration (sec)
100 1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
6
Aug, 2014- Rev.1.0

6 Page







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