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PDF WPMD2075 Data sheet ( Hoja de datos )
| Número de pieza | WPMD2075 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPMD2075 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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WPMD2075
Dual P-Channel, -20V, -3.6A, Power MOSFET
VDS (V)
-20
Typical Rds(on) (mΩ)
60@ VGS=-10V
70@ VGS=-4.5V
100@ VGS=-2.5V
WPMD2075
Http://www.sh-willsemi.com
Descriptions
The WPMD2075 is the Dual P-Channel logic mode
power field effect transistors are produced using high
cell density, DMOS trench technology. This high
density process is especially tailored to minimize
on-state resistance. These devices are particularly
suited for low voltage application, notebook computer
power management and other battery powered circuits
where high-side switching.
.
Features
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
SOT-23-6L package design
Applications
Power Management
DC-DC converter circuit
Simple drive requirement
Load Switch
Charging
2075
PD
Y
W
= Device Code
= Special Code
=Year
=Week
Marking
Order information
Device
WPMD2075-6/TR
Package
SOT-23-6L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1 2016/6/10 – Rev. 1.0
1 page  
10
-V =10V
DS
8 -I =5A
D
6
4
2
0
0 2 4 6 8 10
Q (nC)
g
Total Gate Charge
12
WPMD2075
50
10 Limited By Rds(on)
1ms
1 10ms
0.1 TA = 25 °C
Single Pulse
100ms
1s
10s
BVDSS Limited DC
0.1 1
10 50
VDS - Drain-to-Source Voltage (V)
Safe operating power
Will Semiconductor Ltd.
5 2016/6/10 – Rev. 1.0
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WPMD2075.PDF ] | |
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