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PDF WPM3022 Data sheet ( Hoja de datos )
| Número de pieza | WPM3022 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPM3022 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WPM3022
Single P-Channel, -30V, -3.1A, Power MOSFET
WPM3022
Http://www.sh-willsemi.com
VDS (V)
-30
Typical RDS(on) (mΩ)
56 @ VGS=-10V
77 @ VGS=-4.5V
Descriptions
The WPM3022 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM3022 is Pb-free.
Features
D
S
G
SOT-23
D
3
12
GS
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PD = Device Code
Y = Year
W = Week(A~z)
Marking
Order information
Device
WPM3022-3/TR
Package
SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 2016/08/26- Rev.1.0
1 page  
WPM3022
700
600
500
400
300
200
100
0
0
F=1MHz
Ciss
Crss
Coss
5 10 15
-VDS-Drain to Source Voltage (V)
Capacitance
20
5
4
3
T=150oC
2
1
T=25oC
0
0.2 0.4 0.6 0.8
-VSD-Source to Drain Voltage (V)
1.0
Body diode forward voltage
120
100 TJ(MAX)=150oC
TA=25oC
80
60
40
20
0
1E-4
1E-3
0.01
0.1
1
10
Pulse width (S)
100 1000
100
10 Limit by Rdson
100us
1
0.1
0.01
1ms
10ms
TA=25oC
Single Pulse
10s
DC
100ms
1s
BVDSS Limit
0.1 1 10
-VDS-Drain to Source Voltage(V)
*VGS>minimum VGS at which RDS(ON) is specified
100
Single pulse power
12
10
VDS=-15V
ID=-3.1A
8
Safe operating power
6
4
2
0
0 2 4 6 8 10 12
Qg(nC)
Gate Charge Characteristics
Will Semiconductor Ltd. 5 2016/08/26- Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM3022.PDF ] | |
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