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WPM2049B Schematic ( Datenblatt PDF ) - WillSEMI

Teilenummer WPM2049B
Beschreibung MOSFET
Hersteller WillSEMI
Logo WillSEMI Logo 

Gesamt 7 Seiten
		
WPM2049B Datasheet, Funktion
WPM2049B
Single P-Channel, -20V, -0.51A, Power MOSFET
VDS (V)
-20
Typical Rds(on) (Ω)
0.440@ VGS=-4.5V
0.640@ VGS=-2.5V
0.880@ VGS=-1.8V
WPM2049B
Http://www.sh-willsemi.com
Descriptions
The WPM2049B is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WPM2049B is Pb-free and
Halogen-free.
Features
Trench Technology
ESD protection up to 2 kV
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN1006-3L
DFN1006-3L
Pin configuration (Top view)
E*
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
E = Device Code
* = Month (A~Z)
Marking
Order information
Device
WPM2049B-3/TR
Package
DFN1006-3L
Shipping
10K/Reel&Tape
Will Semiconductor Ltd. 1 Jul, 2015 - Rev.1.0






WPM2049B Datasheet, Funktion
WPM2049B
1 Duty cycle=0.5
0.1
0.01
0.2
0.1
0.05
0.02
1E-3
single pulse
1E-4
1E-6
1E-5
1E-4
PDM
t1
t2
1. Duty Cycle, D=t1/t2
2. Per Unit Base =RθJA= 455°C/W
3. TJM-TA = PDM RθJA
4. Surface Mounted
1E-3 0.01
0.1
1
10
Square Wave Pulse Duration (sec)
100 1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 6 Jul, 2015 - Rev.1.0

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