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Teilenummer | WNM3017 |
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Beschreibung | MOSFET ( Transistor ) | |
Hersteller | WillSEMI | |
Logo | ||
Gesamt 8 Seiten WNM3017
Single N-Channel, 30V, 6.2A, Power MOSFET
VDS (V)
30
Typical RDS(on) (mΩ)
17 @ VGS=10V
Descriptions
The WNM3017 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM3017 is Pb-free.
WNM3017
Http://www.sh-willsemi.com
(6)
(4) (5)
(D)
(S)
(1) (2) (3)
(1)
(2)
(3)
DFN2x2-6L
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package DFN2x2-6L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
Pin configuration (Top view)
3017
NM
Y
W
= Device Code
= Special Code
= Year
= Week(A~z)
Marking
Order information
Device
Package
Shipping
WNM3017-6/TR DFN2x2-6L 3000/Tape&Reel
Will Semiconductor Ltd. 1 2016/03/07- Rev.1.1
Transient thermal response (Junction-to-Ambient)
WNM3017
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
1E-3
Single pulse
1E-4
1E-6 1E-5 1E-4
PDM
t1
t2
1. Duty Cycle, D=t1/t2
2. Per Unit Base =RθJA= 71°C/W
3. TJM-TA = PDM RθJA
4. Surface Mounted
1E-3 0.01 0.1 1 10
Square Wave Pulse Duration (sec)
100 1000
Will Semiconductor Ltd. 6 2016/03/07- Rev.1.1
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ WNM3017 Schematic.PDF ] |
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