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Teilenummer | WNM01N11 |
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Beschreibung | MOSFET ( Transistor ) | |
Hersteller | WillSEMI | |
Logo | ||
Gesamt 7 Seiten WNM01N11
Single N-Channel, 110V, 1.8A, Power MOSFET
VDS (V)
110
Typical Rds(on) (Ω)
0.230@ VGS=10V
0.250@ VGS=4.5V
WNM01N11
Http://www.sh-willsemi.com
Descriptions
The WNM01N11 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM01N11 is Pb-free and
Halogen-free.
SOT-23-6L
DDS
65 4
123
DDG
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Small package SOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
1N11 = Device Code
MA= Special Code
YW= Year&Week
Marking
Order information
Device
Package
Shipping
WNM01N11-6/TR SOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd.
1 2016/02/25 – Rev. 1.0
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10ï4
Single Pulse
10ï3
10ï2
10ï1
1
Square Wave Pulse Duration (sec)
WNM01N11
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 100_C/W
3. TJM ï TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
6 2016/02/25 – Rev. 1.0
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ WNM01N11 Schematic.PDF ] |
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