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Teilenummer | WPM3401 |
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Beschreibung | MOSFET ( Transistor ) | |
Hersteller | WillSEMI | |
Logo | ||
Gesamt 6 Seiten WPM3401
Single P-Channel, -30V, -4.6A, Power MOSFET
VDS (V)
-30
Max RDS (on) (mΩ)
53@ VGS=-10V
56@ VGS=-4.5V
WPM3401
www.sh-willsemi.com
Descriptions
The WPM3401 is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-
state resistance. These devices are particularly suited
for low voltage application, notebook computer power
management and other battery powered circuits where
high-side switching.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Small package SOT-23-3L
Applications
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
SOT-23-3L
D
3
12
GS
Pin configuration (Top view)
3
WP1U
12
WP1= Specific Device Code
U = Date Code
Marking
Order information
Device
Package
Shipping
WPM3401-3/TR SOT-23-3L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Nov, 2014 - Rev.2.3
Package outline dimensions
SOT-23-3L
WPM3401
6\PERO
A
A1
A2
b
c
D
E
E1
e
e1
L
ș
'LPHQVLRQV,Q0LOOLPHWHUV
0LQ 0D[
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0° 8°
Will Semiconductor Ltd.
6
'LPHQVLRQV,Q,QFKHV
0LQ 0D[
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0° 8°
Nov, 2014 - Rev.2.3
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ WPM3401 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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