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WNM6001 Schematic ( PDF Datasheet ) - Will Semiconductor

Teilenummer WNM6001
Beschreibung N-Channel MOSFET
Hersteller Will Semiconductor
Logo Will Semiconductor Logo 




Gesamt 7 Seiten
WNM6001 Datasheet, Funktion
WNM6001
Single N-Channel, 60V, 0.50A, Power MOSFET
VDS (V)
Rds(on) (Ω)
1.4@ VGS=10V
60
1.7@ VGS=4.5V
ESD Rating:2000V HBM
Descriptions
The WNM6001 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM6001 is Pb-free and
Halogen-free.
WNM6001
Http//:www.sh-willsemi.com
SOT-23
D
3
12
GS
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin configuration (Top view)
3
W61*
12
W61 = Device Code
* = Month (A~Z)
Marking
Order information
Device
Package
Shipping
WNM6001-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Sep, 2013 - Rev.1.0






WNM6001 Datasheet, Funktion
WNM6001
1
Duty Cycle=0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single Pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Square Wave Pulse Duration (s)
PDM
t1
t2
1. Duty Cycle, D=t1/t2
2. Per Unit Base =RθJA= 176°C/W
3. TJM-TA = PDM RθJA
4. Surface Mounted
10 100 1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 6 Sep, 2013 - Rev.1.0

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