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Teilenummer | WNMD3014 |
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Beschreibung | Dual N-Channel MOSFET | |
Hersteller | Will Semiconductor | |
Logo | ||
Gesamt 7 Seiten WNMD3014
Dual N-Channel, 30V, 6.8A, Power MOSFET
VDS (V)
30
Rds(on) (ȍ)
0.023@ VGS=10V
0.033@ VGS=4.5V
WNMD3014
Http//:www.willsemi.com
Descriptions
The WNMD3014 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNMD3014 is Pb-free and
Halogen-free.
Features
SOP-8L
D1 D1 D2 D2
8 76 5
1 234
S1 G1 S2 G2
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOP-8L
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Pin configuration (Top view)
87 6
WNM3014
YYWW
5
1 2 34
WNM3014 = Device Code
YY = Year
WW = Week
Marking
Order information
Device
Package
Shipping
WNMD3014-8/TR SOP-8L 2500/Reel&Tape
Will Semiconductor Ltd. 1 Mar, 2012 - Rev.1.0
WNMD3014
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 76° C /W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 6 Mar, 2012 - Rev.1.0
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ WNMD3014 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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