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PDF WNMD2167 Data sheet ( Hoja de datos )
| Número de pieza | WNMD2167 | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNMD2167
Dual N-Channel, 20V, 6.3A, Power MOSFET
VDS (V)
20
Typical Rds(on) (Ω)
0.016@ VGS=4.5V
0.018@ VGS=3.1V
0.020@ VGS=2.5V
Descriptions
The WNMD2167 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2167 is Pb-free.
WNMD2167
Http//:www.willsemi.com
SOT-23-6L
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin configuration (Top view)
6 54
2167
YYWW
1 23
2167 =
YY =
WW =
Device Code
Year
Week
Marking
Order information
Device
Package
Shipping
WNMD2167-6/TR SOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.2
1 page  
WNMD2167
1800
1600
1400
1200
1000
800
600
400
200
0
0
50
45
40
35
30
25
20
15
10
5
0
1E-4
CISS
COSS
CRSS
2468
VDS- Drain to Source Voltage(V)
Capacitance
10
TJ(Max)=150°C
TA=25°C
1E-3 0.01 0.1 1 10
Pulse width (S)
100 1000
Single pulse power
20
T=25°C
T=150°C
15
10
5
0.0
100
0.2 0.4 0.6 0.8 1.0
VSD- Source to Drain Voltage (V)
Body diode forward voltage
1.2
Limit by Rdson
10
100us
1
10S
1ms
10ms
0.1 TA=25°C
Single Pulse
100ms
DC 1S
Bvdss Limit
0.01
0.1
1 10 100
VDS- Drain Source Voltage (V)
* V > minimum V at which RDS(on) is specified
GS GS
Safe operating power
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
V =4.5V
GS
ID=6.3A
2 4 6 8 10
Qg (nC)
Gate Charge Characteristics
12
Will Semiconductor Ltd. 5 Jan, 2015 - Rev.1.2
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNMD2167.PDF ] | |
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