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Teilenummer | WNMD2160 |
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Beschreibung | Dual N-Channel MOSFET | |
Hersteller | Will Semiconductor | |
Logo | ||
Gesamt 7 Seiten WNMD2160
Dual N-Channel, 20V, 6.3A, Power MOSFET
VDS (V)
Rds(on) (ȍ)
0.0157@ VGS=4.5V
0.018@ VGS=3.1V
20
0.020@ VGS=2.5V
ESD Rating: 2000V HBM
WNMD2160
Http//:www.willsemi.com
Descriptions
The WNMD2160 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2160 is Pb-free.
Features
SOT-23-6L
G1 D1/D2 G2
654
1 23
S1 D1/D2 S2
Pin configuration (Top view)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-6L
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
6 54
2160
YYWW
1 23
2160
YY
WW
= Device Code
= Year
= Week
Marking
Order information
Device
Package
Shipping
WNMD2160-6/TR SOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.4
WNMD2160
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10ï4
Single Pulse
10ï3
10ï2
10ï1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110_C/W
3. TJM ï TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 6 Jan, 2015 - Rev.1.4
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ WNMD2160 Schematic.PDF ] |
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